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Ferroelectric Memory, 2.7-3.65V, FRAM, 64K - Organized as 8K x 8 bits, High Endurance 10 Billion Read / Writes • 45 Year Data Retention, NoDelay ™ Writes, Advanced High-Reliability, Ferroelectric Process, SPI
This Product was added to our catalogue on Tuesday 05 July, 2016.